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MICROWAVE RELAXOMETER |
| The device is designed for express non-destructive contactless local measurement of
non-equilibrium charge carrier effective lifetime in silicon substrates, epi-wafers and solar
cells at different stages of manufacturing cycle. It can be used for incoming and outcoming
inspection of silicon ingots and wafers, tuning and periodic inspection of semiconductor and
solar cell technology quality.
Lifetime determination is based on measuring photoconductivity decay after pulselight
photo-exciting with usage of reflected microwave as a probe.
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 |
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Main technical parameters |
| Parameter |
Value |
| Laser LED parameters: |
|
| wave length, nm |
975 |
| power adjustment range at measurement zone, mW |
50 - 500 |
| impulse length adjustment range, µs |
2 - 64 |
| Microwave generator frequency, GHz |
10 |
| Measured object size: |
|
| height, mm |
< 210 |
| width, mm |
< 210 |
| length, mm |
160 - 300 |
| Measurement minimal step, mm |
1 |
| Resistivity, Ohm·cm |
0,5 - 12 |
| Measured lifetime range, µs |
0,8 - 300 |
| Consumed power (230V, 50Hz), W |
< 100 |
| Dimensions, mm |
365 x 645 x 565 |
| Weight, kg |
30 |
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CONTACTLESS RESISTIVITY TESTER FOR SEMICONDUCTOR INGOTS |
The Contactless Resistivity Tester is a device
meant for testing electrical resistance on flat and
bubble surfaces of semiconductor ingots.
Measuring of the resistivity of the silicon
ingots is based on the determination of magnetic
energy power losses caused by eddy currents
inside the ingot.
It enables repidity and contactlessness of
measurement and does not require special surface
treatment before measurement.
|
 |
Main technical parameters |
| Parameter |
Value |
| Measured resistivity range, Ohm·cm |
0,001 - 100 |
| Measurement duration, s |
2 |
| Minimal size of measured surface, mm |
30x30 |
Measurement conditions:
temperature, °C
relative humidity, %
atmospheric pressure, kPa
|
+ 20
<= 80
86 - 106
|
| Consumed power (220V, 50Hz), W |
<= 5 |
| Dimensions (without probe), mm |
280x200x60 |
|
SOLAR CELL TESTER |
The tester is designed for terrestrial solar cell incoming/outcoming inspection with the
purpose of checking and optimizing parameters and preventing manufacture defects of solar modules.
Solar cells are not heated in process of inspection due to the use of xenon pulse lamp installed in the tester.
The tester is PC controlled and enables to select inspection options ranging from
simple check in a particular I-V curve point up to full I-V curve recording and statistical processing
of measurement results.
The tester can be involved into automatic testing/sorting station.
|
|
Main technical parameters |
| Parameter |
Value |
| Light flux intensity adjustment range, W/m2 |
600 - 1200 |
| Unevenness light flux during one measurement, % |
1 |
| Uniform illumination field with uneven 1%, mm |
150х150 |
| Spectrum of light |
AM 1.5
class B (IEC 904-9) |
| Measured voltage range, V |
-1,5 - +1,5 |
| Voltage measurement accuracy with open circut voltage range 0,5 - 1,0 V |
± 1% |
| Voltage measurement discreteness, mV |
0,3 |
| Measured current range, A |
0 - 8,0 |
| Current measurement accuracy with short circut current range 0,7 - 5,0 A |
± 1% |
| Current measurement discreteness, mA |
1,3 |
| Light impulse duration, ms |
< 10 |
| Supported table temperature, °C |
25 ±0,5 |
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