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| !! silicon wafers are available at stock. click here to get an information !! |
Our more than 20 years experience in producing
semiconductor devices and integrated circuits,
wide achievements in semiconductor materials
and their physics allowed us in 1994 to found
the department of Telecom-STV to produce silicon
wafers.
Our production covers all stages from ingots
through wire sawing, lapping, edge grinding, polishing,
test operations and packing up to SEMI
grade silicon wafers.
We produce a wide range silicon wafers from
1 to 6 inch with various ultimate quality like as-cut,
as-lapped, one-side and double-side polished
wafers.
Monthly capacity of our production line is
25,000 polished wafers in one shift. In case of two
shifts schedule we can produce up to 50,000-
70,000 wafers monthly.
Permanent contact with our customers and
knowledge technology of device give us an opportunity
to adjust wafers’ parameters to meet special
technological requirements.
Our production department is equiped with all
standard testing devices to control silicon wafers in
output. Another department of Telecom-STV
designed and created some original testing
devices like contactless microwave relaxometer
for measurement of non-equilibrium charge carrier
effective lifetime in silicon wafers, X-ray defectoscopy
for control defect level in wafers, contactless
tester for measuring resistivity of ingots and
wafers and so on. All these devises allow us to
control more parameters of wafers than it is
required by SEMI standards.
We also produce customized silicon wafers,
wafers for MEMS application, wafers with surface
getter and solid silicon object of various shapes for
different applications.
Any special requirement will be taken into
considiration and even small quantity order will be
performed in time with requested parameters.
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MIRROR-POLISHED SILICON WAFERS |
| Parameter | Value |
| Diameter, mm | 150 | 100 | 76.2 | 50.8 |
Diameter tolerance, mm
(standard/minimum) | ±0.2/±0.1 | ±0.5/±0.1 | ±0.5/±0.1 | ±0.4/±0.1 |
Thickness, µm
(standard/minimum) | 675/350 | 525/300 | 380/200 | 275/150 |
Thickness tolerance, µm
(standard/minimum) | ±15/±5 |
TTV, µm (standard/minimum)
not more | 10/2 | 10/2 | 10/1 | 10/5 |
Warp, µm (standard/minimum)
not more | 40/10 | 40/10 | 30/5 | 30/5 |
Front side particles, (0.3 µm)
not more | 10 | 5 | 5 | 5 |
| Flats as per SEMI or customer's order |
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AS-LAPPED SILICON WAFERS FOR DESCRETE DEVICE |
| Parameter | Value |
| Diameter, mm | 34 | 42 | 50 | 63.5 | 76.2 | 100 | 150 |
| Minimum thickness, µm | 150 | 200 |
| Thickness tolerance, µm | ±10 | ±12 |
TTV (std/min), µm
not more | 2/1 |
Warp (std/min), µm
not more | 15/12 | 20/12 | 30/15 | 35/20 | 35/20 |
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CUSTOM PROCESSING
Thermal Oxide
LTO (Low Temperature Oxide)
PSG (Phosphorous Doped Oxide)
TEOS Oxide
Plasma Oxide
Plasma Nitride
LPCVD Silicon Nitride
Polysilicon
Photolithography
Photoresist Coating
and other... |
CUSTOM SERVICES
Auto-Sort Capabilities for Type,
Resistivity, Thickness and Flatness
Epitaxial Layers
Ingot Slicing
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